Gallium Arsenide (GaAs)

Fueling High-Speed Optoelectronic Innovation

Gallium Arsenide (GaAs) is the material of choice for high-frequency, high-efficiency RF and photonic devices, driving advancements in 5G and optoelectronics. Through our Singapore-Taiwan partnership, leveraging Taiwan’s 46% global foundry expertise, we deliver GaAs solutions with superior electron mobility and direct band gap. Powering the GaAs market, our material enables compact, low-noise systems for telecommunications and aerospace.

Standout Features

  • High Electron Mobility: 8500 cm²/V·s enables ultra-fast signal processing for RF applications.

  • Direct Band Gap: 1.43 eV ensures efficient photon emission for lasers and LEDs.

  • High-Frequency Capability: Supports >100 GHz operation for mmWave and microwave systems.

  • Low Noise: Reduced carrier scattering enhances signal clarity in RF devices.

  • Thermal Stability: Operates up to 200°C, ideal for harsh telecom and aerospace environments.

GaAs vs. Silicon – Material Advantages

  • Electron Mobility: 8500 cm²/V·s (vs. silicon’s 1400 cm²/V·s) enables 6x faster signal processing.

  • Direct Bandgap: 1.43 eV (vs. silicon’s indirect 1.12 eV) supports efficient lasers and LEDs.

  • Higher Frequency: >100 GHz (vs. silicon’s 10–20 GHz) excels in mmWave and RF applications.

  • Lower Noise: Reduced scattering improves signal integrity in amplifiers and transceivers.

  • Smaller Footprint: Higher performance enables 20% smaller chip designs vs. silicon.

Industries Served

  • Telecommunications

  • Consumer Electronics

  • Aerospace

  • Automotive

  • Medical

Superior Benefits

  • Ultra-Fast Performance: Powers low-latency 5G networks and satellite communications.

  • Energy Efficiency: Direct band gap reduces power consumption in photonic devices by 30%.

  • Compact Designs: Enables miniaturized RF and optoelectronic components for consumer electronics.

  • High Reliability: Robust material properties ensure long-term performance in critical applications.

  • Scalable Production: Supports high-volume manufacturing for cost-effective solutions.

Applications

  • 5G Telecommunications: RF amplifiers and transceivers for high-speed networks.

  • Electric Vehicles: LiDAR photodetectors for autonomous vehicles .

  • Optoelectronics: Lasers, LEDs, and VCSELs for fiber optics and displays.

  • Aerospace: Microwave ICs for radar and satellite communications.

  • Consumer Electronics: Photodetectors and LEDs for smartphones and AR/VR systems.

  • Medical Devices: Optical sensors for diagnostic and imaging equipment.

Why Choose Gallium Arsenide?

Gallium Arsenide is the driving force behind high-speed, energy-efficient RF and optoelectronic systems, outpacing silicon with its superior electron mobility and direct bandgap. Our GaAs material empowers innovators to create compact, low-noise solutions for 5G, photonics, and aerospace, delivering unmatched performance and reliability for a connected, high-tech future.