GALLIUM ARSENIDE (GaAs) WAFERS
Pioneering High-Speed Electronics
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.+ We offer fully customizable GaAs wafers and substrates to suit your unique needs, including specialized epitaxial options. Contact us today for a personalized quote and explore how our tailored solutions can elevate your projects.
Gallium Arsenide (GaAs) wafers are critical for high-frequency and optoelectronic devices, driven by demand in 5G telecommunications, consumer electronics, and aerospace. Classified as a compound semiconductor, our GaAs wafers redefine performance in high-frequency and optoelectronic applications, powering the future of 5G, aerospace, and consumer electronics. Engineered through our Singapore-Taiwan partnership, leveraging Taiwan’s 60% global semiconductor dominance, our VGF-grown GaAs wafers deliver exceptional electron mobility, direct band gap, and radiation resistance.
Designed for reliability in RF and photonic devices, they enable compact, low-noise solutions for smartphones, satellites, and solar cells. With low-defect substrates and scalability to 8-inch wafers, our GaAs wafers elevate your high-performance devices with unmatched speed and efficiency.
Our GaAs Wafers
2 Inch Semi-Insulating GaAs Epitaxial Wafer
2 Inch N-Type Silicon-Doped GaAs Template
3 Inch Semi-Insulating Undoped GaAs Epitaxial Wafer
3 Inch P-Type Zinc-Doped GaAs Wafer
4 Inch Semi-Insulating GaAs Epitaxial Wafer
4 Inch N-Type Silicon-Doped GaAs Template
6 Inch Semi-Insulating Undoped GaAs Epitaxial Wafer
6 Inch P-Type Zinc-Doped GaAs Wafer for Photovoltaics
WHY CHOOSE GaAs WAFERS?
Superior Speed
High electron mobility (8,500 cm²/V·s) enables 250 GHz operation, critical for 5G and radar markets.
Optoelectronic Efficiency
Direct band gap (1.43 eV) delivers 30%+ efficiency in LEDs and solar cells, outperforming silicon.
Reliability
Low EPD (≤500/cm²) and radiation resistance ensure consistent performance in harsh environments.
Compact Solutions
40% smaller RF components meet demand for miniaturized 5G and IoT devices.
Future-Proof
Aligned with the $2.26 billion GaAs market’s 11.44% CAGR, our wafers drive innovation in telecom and aerospace.
WHY CHOOSE US?
Our GaAs Wafers lead in a competitive market, powered by Singapore’s market agility and Taiwan’s world-class semiconductor expertise. Here’s why global buyers trust us:
Premium Quality
Partnering with Taiwanese leaders in Gallium Arsenide, we deliver VGF-grown GaAs wafers with EPD ≤500/cm², meeting JEDEC and MIL-STD standards for telecom and aerospace applications.
Cost Efficiency
Our 6-inch wafers and thin-film technologies reduce costs by up to 20%, addressing buyer concerns about GaAs’s high cost vs. silicon.
Custom Solutions
Tailored doping (Si, Zn) and substrate sizes meet specific project needs, mirroring Freiberger’s application-specific approach.
Sustainability Focus
Non-toxic VGF processes and high-efficiency devices support green initiatives, reducing energy use in 5G and solar applications.
Advanced Manufacturing
Using VGF and LEC processes in Taiwan’s cleanrooms, we achieve high-uniformity 6-inch wafers, matching key player’s low-defect substrates for cost-efficient production.
Reliable Supply Chain
Unlike competitors facing gallium supply constraints (80% from China), our Singapore-Taiwan synergy ensures stable supply, inspired by Sumitomo Electric’s global sourcing strategy.
Global Trust
Certified to ISO 9001, ISO 14001, RoHS, and REACH, our wafers are trusted by OEMs in 50+ countries, backed by Taiwan’s 90% advanced chip share.
Contact Us: Ready to elevate your designs with our GaAs Wafers? Click below to request a quote or discuss custom specifications.
SPECIFICATIONS
Material: GaAs (III-V compound semiconductor, zinc blende structure)
Diameter: 4-inch (100mm), 6-inch (150mm), 8-inch (200mm) (scalable for high-volume production)
Thickness: 350–625 µm (customizable per application)
Etch Pit Density (EPD): ≤500/cm² (low-defect for high reliability)
Surface Finish: Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE), mirror-like, Ra <0.5 nm
Doping: Si-doped (n-type) or Zn-doped (p-type) for RF and optoelectronic applications
Electron Mobility: 8,000–8,500 cm²/V·s (6x silicon for high-speed performance)
Bandgap: 1.43 eV (direct, enabling efficient light emission/absorption)
Thermal Conductivity: 55 W/m·K (optimized for high-frequency devices)
Breakdown Electric Field: 0.4 MV/cm (supports high-voltage RF applications)
Crystal Orientation: (100), optimized for HEMTs, HBTs, and photonic devices
Packaging: Class 100 cleanroom, vacuum-sealed for contamination-free delivery
Contact Us: Inquire about custom specifications or pricing. Click below to connect with our team.
STANDOUT FEATURES
Direct Band Gap
1.43 eV (vs. silicon’s indirect 1.1 eV) supports efficient optoelectronic devices like LEDs and laser diodes.
High-Frequency Performance
Up to 250 GHz operation with low noise, enabling 5G base stations and radar systems.
Radiation Resistance
Resists radiation damage, making GaAs ideal for space electronics and satellite solar cells.
High Electron Mobility
8,000–8,500 cm²/V·s enables ultra-fast switching, ideal for 5G RF amplifiers and high-speed ICs.
Lower Noise
Reduced signal distortion in high-frequency circuits, enhancing performance in wireless communications.
Low Defect Density
EPD ≤500/cm² ensures high reliability and yield for aerospace and telecommunications applications.
ADDITIONAL BENEFITS
Energy Efficiency
30% lower power consumption than silicon, reducing operating costs in smartphones and IoT devices.
Durability
Operates reliably at high temperatures and radiation levels, ensuring longevity in aerospace and defense systems.
Compact Designs
High electron mobility allows 40% smaller RF components, ideal for 4G/5G smartphones.
Contact Us: Discover how our GaAs Wafers can optimize your designs. Click below for a quote.
High Conversion Capability
GaAs solar cells achieve 30%+ efficiency, outperforming silicon for space and terrestrial applications.
Scalable Wafer Sizes
2-inch to 6-inch diameters, with 6-inch offering 2x more chips per wafer, reducing costs.
INDUSTRIES, APPLICATIONS & SYSTEMS USING GaAs WAFERS
RF & Microwave Electronics
GaAs RF Transistors (MESFETs, HEMTs)
GaAs RF & Microwave Amplifiers (LNAs, HPAs)
GaAs Microwave Integrated Circuits (MMICs)
GaAs Oscillators, Mixers, and Switches
5G cellular networks & infrastructure (base stations, RF front-ends)
Wireless communication hubs & base stations
Smartphones, tablets & smart TVs (RF, Wi-Fi, Bluetooth, GPS modules)
Wearable devices (low-power RF connectivity, sensors)
Remote controls & short-range RF communication devices
Optical data transfer modules (fiber-optic communication, datacenter interconnects)
Automotive radar (24 GHz, 77 GHz) for advanced driver-assistance systems (ADAS)
LiDAR modules for autonomous driving (used in Tesla, BMW, Mercedes R&D)
In-vehicle communication & infotainment RF systems
Satellite broadband communication systems
Satellite payloads (RF amplifiers, imaging sensors, transponders)
Our GaAs Wafers
2 Inch Semi-Insulating GaAs Epitaxial Wafer
2 Inch N-Type Silicon-Doped GaAs Template on GaAs Substrate
3 Inch Semi-Insulating Undoped GaAs Epitaxial Layer
3 Inch P-Type Zinc-Doped GaAs Wafer
4 Inch Semi-Insulating VGF GaAs Epitaxial Wafer
4 Inch N-Type Silicon-Doped GaAs Template
6 Inch Semi-Insulating Undoped GaAs Epitaxial Structure
6 Inch P-Type Zinc-Doped GaAs Wafer for Photovoltaics
Industries
Telecommunications
Consumer Electronics
Electric Vehicles
Satellite Systems
Aerospace
Photovoltaics
GaAs Single-Junction Solar Cells
GaAs Multi-Junction & Tandem Solar Cells
Systems / Devices
Defense
Renewable Energy
Medical
Industrial & Automation
Research & Development
Applications
Optoelectronics
GaAs Laser Diodes (including EELs, VCSELs)
GaAs LEDs (infrared & visible spectrum)
GaAs Photodetectors & Photodiodes
GaAs Optical Transmitters/Receivers
Satellite imaging & Earth observation platforms
Spacecraft navigation & communication systems
Space missions (deep-space communications, power systems)
Space solar panels & concentrated photovoltaic arrays
Aircraft communication systems (secure avionics RF links)
Avionics displays & cockpit electronics
Radar systems (airborne, naval, and ground-based)
Defense AESA radars (active electronically scanned arrays)
Military surveillance & reconnaissance systems
Electronic warfare systems (signal jamming, countermeasures)
Communication jamming devices
Missile guidance & targeting systems
At Supreme Pro, we offer fully customizable GaAs wafers and substrates to suit your unique needs, including specialized epitaxial options. Contact us today for a personalized quote and explore how our tailored solutions can elevate your projects.
Advanced & Emerging Applications
GaAs Photonic Integrated Circuits (PICs)
GaAs Quantum & Experimental Devices
GaAs High-Speed Integrated Circuits for Communications
Concentrated photovoltaic (CPV) arrays (high-efficiency GaAs-based solar cells)
Concentrated solar power (CSP) systems with GaAs-based receivers
Diagnostic imaging equipment (MRI, X-ray, CT detectors, ultrasound)
Surgical tools with GaAs-based optical/electronic precision modules
Medical lasers & laser therapy devices (dermatology, oncology, ophthalmology)
Process control systems (factory monitoring & automation)
Industrial sensors (high-frequency, radiation-resistant GaAs detectors)
Automated manufacturing & robotics systems
University laboratories (photonics, RF, semiconductor research)
R&D institutions (telecom, defense, space-focused projects)
Technology innovation centers & development programs
