SILICON CARBIDE (SiC) WAFERS

Powering the Future of Electronics

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Silicon Carbide (SiC) wafers are critical for high-performance power electronics, driven by demand in electric vehicles (EVs), renewable energy, and 5G telecommunications. Classified as a compound semiconductor, our SiC wafers are engineered to redefine performance in high-power, high-frequency, and high-temperature applications. Sourced from Taiwan’s world-leading semiconductor ecosystem and leveraging Singapore’s status as a global business hub, our SiC wafers deliver unmatched thermal conductivity, high-voltage resilience, and superior electron mobility.

Designed for automotive-grade reliability, our wafers enable compact, efficient, and sustainable solutions for electric vehicles, renewable energy, 5G systems, defense and aerospace. Backed by world-class quality and cost-effective pricing, these wafers are your gateway to cutting-edge innovation and efficiency in your next-generation devices.

+ We offer fully customizable SiC wafers and substrates to suit your unique needs, including specialized epitaxial options. Contact us today for a personalized quote and explore how our tailored solutions can elevate your projects.

WHY CHOOSE SiC WAFERS?

  • Unmatched Performance

    SiC’s wide bandgap and high thermal conductivity enable smaller, lighter, and more efficient devices, critical for EV and 5G markets.

  • Scalability

    Transition to 200mm wafers increases chip yield by up to 30%, reducing costs and meeting high-volume demand.

  • Reliability

    Low defect density (MPD ≤5/cm²) and AEC-Q100 compliance ensure consistent performance in mission-critical applications.

  • Sustainability

    High-efficiency SiC devices reduce energy consumption, supporting decarbonization goals (78% CO2 reduction in EVs).

  • Future-Proof

    Aligned with the $2.65 billion SiC market’s 22.24% CAGR, our wafers drive innovation in AI, 5G, and renewable energy.

WHY CHOOSE US?

Superior Quality

Leveraging Taiwan’s 60% global chip share, we deliver Prime Grade 4H-SiC wafers with micropipe density ≤5/cm², meeting stringent AEC-Q100 standards for automotive and aerospace applications.

Cost Efficiency

Our focus on yield optimization (up to 90% in 2026 scenarios) and reusable wafer technologies reduces costs by up to 30%, addressing buyer concerns about SiC’s high cost vs. silicon.

Custom Solutions

We offer tailored wafer specifications (e.g., doping, thickness) and dedicated support, matching key player’s customer-centric approach, to meet unique project needs.

Sustainability Focus

Our SiC wafers enable energy-efficient devices, reducing EV ownership costs by ~$2,000 and supporting decarbonization, aligning with buyer priorities for green technology.

Advanced Manufacturing

Partnering with Taiwanese leaders in this sector, we use cutting-edge PVT and CVD processes to ensure low-defect, high-uniformity wafers, scalable to 200mm for cost-efficient production.

Reliable Supply Chain

Unlike competitors facing 20% supply shortages, our vertically integrated supply chain, inspired by STMicroelectronics’ Catania campus, ensures consistent delivery and extended longevity programs.

Global Trust

Certified to ISO 9001, ISO 14001, RoHS, and REACH standards, our wafers are trusted by OEMs in 45+ countries, backed by Singapore-Taiwan expertise.

Contact Us: Ready to elevate your designs with our SiC Wafers? Click below to request a quote or discuss custom specifications.

SPECIFICATIONS

  • Material: 4H-SiC (primary polytype for power electronics; 6H-SiC for specific RF applications)

  • Diameter: 100mm, 150mm, 200mm (8-inch gaining traction for high-volume cost efficiency)

  • Thickness: 350–500 µm (customizable, with ±25 µm tolerance for standard grades)

  • Micropipe Density (MPD): ≤1/cm² (Ultra-Prime Grade) or ≤5/cm² (Prime Grade) for low-defect performance

  • Resistivity Uniformity: ≥95% (ensuring consistent doping across the wafer)

  • Surface Finish: Chemical Mechanical Polishing (CMP), epi-ready, Ra <0.2 nm for optimal epitaxial growth

  • Doping: N-type (nitrogen-doped, resistivity 0.015–0.028 Ω·cm) or semi-insulating (vanadium-doped, >10^5 Ω·cm)

  • Thermal Conductivity: 370–490 W/m·K (superior heat dissipation, 3x silicon)

  • Breakdown Electric Field: 2.5–3.5 MV/cm (10x silicon for high-voltage resilience)

  • Bandgap: 3.26 eV (wide bandgap enabling 3x silicon's temperature tolerance)

  • Crystal Orientation: (0001) with 4° off-axis (optimized for epitaxial layer quality in power devices)

  • Total Thickness Variation (TTV): <5 µm (for uniform processing)

  • Bow/Warp: <25 µm bow, <40 µm warp (minimizing handling issues)

  • Packaging: Class 100 cleanroom, vacuum-sealed in anti-static containers for contamination-free transport

Contact Us: Inquire about custom specifications or pricing. Click below to connect with our team.

STANDOUT FEATURES

High Thermal Conductivity

370–490 W/m·K ensures efficient heat dissipation, ideal for high-power EV inverters and 5G amplifiers.

Wide Band Gap

SiC’s 3.26 eV band gap (vs. silicon’s 1.12 eV) supports higher voltages and temperatures, reducing cooling needs.

Chemical Stability

SiC resists degradation from acids, alkalis, and molten salts up to 800°C, unlike silicon, which fails at lower thresholds.

Advanced Surface Quality

CMP delivers a mirror-like finish (Ra <0.5 nm), ensuring optimal epitaxial layer growth for high-performance devices.

Scalable Wafer Sizes

Available in 50mm, 100mm, 150mm, and 200mm diameters, supporting high-yield production for automotive and industrial applications.

Superior Electron Mobility

High electron drift velocity (2x silicon) enables faster switching and lower losses in MOSFETs and diodes.

High Breakdown Field

2.5–3 MV/cm (10x silicon) enables robust high-voltage devices, ideal for 800V EV platforms.

Low Defect Density

Micropipe density ≤5/cm² (Our Prime Grade) minimizes performance-limiting imperfections, enhancing device reliability.

ADDITIONAL BENEFITS

Enhanced Efficiency

SiC wafers reduce conduction losses by up to 30%, enabling 99%+ efficiency in EV chargers and solar inverters.

Longer Device Lifespan

Superior thermal and chemical stability (resists acids/alkalis up to 800°C) extends device durability in harsh environments.

Compact Designs

High breakdown voltage (up to 10x silicon) allows smaller, lighter power modules, reducing EV manufacturing costs by ~$2,000 per vehicle.

Contact Us: Discover how our SiC Wafers can optimize your designs. Click below for a quote.

High-Temperature Operation

Functions reliably at junction temperatures up to 500°C, ideal for aerospace and automotive applications.

Sustainability

Enables energy-efficient systems, reducing CO2 emissions by 78% in EVs compared to gasoline vehicles.

INDUSTRIES, APPLICATIONS & SYSTEMS USING SiC WAFERS

Power Electronics

SiC Schottky Diodes

SiC MOSFETs

SiC IGBTs

SiC Power Modules

SiC Converters & Inverters

SiC High-Power Rectifiers

SiC High-Voltage Switches & Power Supplies

Electric Vehicle (EV) Powertrains

Traction Inverters

On-Board Chargers (OBC)

EV Battery Chargers (DC Fast Chargers, Level 2 AC Chargers)

EV Thermal Management Systems

Aircraft Electrical Power Systems

Avionics Systems

Satellite Electronics

Spacecraft Power Management Units (PMU)

Satellite Communication Payloads

Industries

Electric Vehicles

Aerospace

Defense

Telecommunications

Data Centers

Sensors & High-Temperature Devices

SiC High-Temperature Sensors & Components

SiC Corrosion-Resistant Sensors/Devices

SiC Radiation-Resistant Sensors/Devices

Systems / Devices

Radar Systems (Ground-Based & Airborne)

Military Communication Systems

Missile Guidance & Control Systems

5G Base Stations

Wireless Communication Infrastructure

Data Centers (Power Supplies, Cooling Systems)

High-Performance Computing (HPC) Servers

Solar Inverters

Wind Turbine Converters

Renewable Energy

Grid Systems

Industrial & Automation

Medical

Research & Development

Applications

RF & Microwave Devices

SiC RF Transistors

SiC High-Frequency & Microwave Devices

Optoelectronics

SiC LEDs

SiC Optoelectronic Devices

Energy Storage Systems (ESS) Inverters

Grid-Tied Power Conversion Systems

Utility-Scale Power Distribution Systems

Smart Grid Infrastructure

High-Voltage Direct Current (HVDC) Transmission Systems

Motor Drives (Low & Medium Voltage)

Industrial Automation Equipment

Robotics Power Systems

Heavy-Duty Machinery (Construction, Agricultural, Mining)

Downhole Drilling Equipment

At Supreme Pro, we offer fully customizable SiC wafers and substrates to suit your unique needs, including specialized epitaxial options. Contact us today for a personalized quote and explore how our tailored solutions can elevate your projects.

Research Applications

SiC Quantum Computing Substrates

SiC Experimental/Prototype Devices

Offshore Oil & Gas Platform Power Systems

Chemical Reactor Power & Control Systems

Process Control Systems

Medical Imaging Equipment (MRI, CT, PET Scanners)

Radiation Therapy Machines

Portable Medical Devices (Diagnostic & Therapeutic)

University Laboratory Test Systems

Research Institution Prototypes

Technology Development & Pilot Centres