SiC MOSFETs

High-Efficiency Power Switching

650 V to 1,200 V silicon carbide MOSFETs with on-resistance from about 20 mΩ, low switching loss and high junction-temperature ratings. Built for EV traction inverters, on-board and DC fast chargers, solar and energy-storage converters and industrial motor drives, in standard discrete and module packages.

TIMs

Thermal Interface Materials

Thermal pads, adhesive pads and tapes, greases, phase-change materials, ceramic heat spreaders, conductive foil tapes and EMI absorbers, with thermal conductivity from 1 to 8 W/m·K and operating ranges to +200 °C. Die-cut to your footprint for processors, power modules, EV batteries, 5G equipment and server boards.

GaN Wafers

Substrates for RF, Power and Optoelectronics

Gallium nitride epitaxial wafers and templates — GaN-on-silicon, GaN-on-sapphire and GaN-on-SiC — 50–200 mm depending on substrate [confirm sizes]. High electron mobility and high-frequency switching for 5G RF front-ends, data-centre and charger power stages, LEDs and micro-LEDs.

SiC Diodes

Zero-Recovery Rectification

600 V to 1,700 V silicon carbide Schottky diodes with zero reverse recovery, low forward voltage and high surge capability. Used in PFC stages, EV chargers, solar inverters and server power supplies where switching loss and heat must be minimised.

Testing, Assembly & Packaging Equipment

Back-End Automation

Automated lines for discrete components and inductors — cutting and lead forming, test and sorting, laser marking, visual inspection, taping and aging test — for 5G, automotive and consumer electronics production.

GaAs Wafers

Substrates for RF and Optoelectronics

Gallium arsenide substrates and epitaxial wafers, 100–150 mm, semi-insulating or conductive. The 1.42 eV direct bandgap suits RF amplifiers, photodetectors, lasers and VCSELs for 5G/6G, sensing and optical communication.

GaN HEMTs

High-Frequency Power Transistors

100 V to 650 V gallium nitride transistors with low gate charge and switching into the megahertz range. For data-centre and telecom power supplies, USB-PD and EV on-board chargers, motor drives and RF power amplifiers, in surface-mount packages.

Smart Manufacturing Systems

Digital Factory Management

Equipment networking, data collection and OEE analysis for component production lines, giving real-time process control and power-saving simulation across the factory floor.

InP Wafers

Substrates for High-Speed Photonics

Indium phosphide substrates, 50–100 mm, for lasers, photodetectors, high-speed transceivers and photonic integrated circuits. Electron mobility around 5,400 cm²/V·s and low-noise performance make InP the platform for data-centre optical interconnects, co-packaged optics and space-grade amplifiers.

AlSiC

Lightweight Thermal Management

Aluminium silicon carbide metal-matrix composites with thermal conductivity of 170–230 W/m·K and a tunable 6–10 ppm/K expansion coefficient, near-net-shape cast to your drawing. Baseplates, pin-fin plates, lids and fixtures for EV power modules, high-performance packaging, co-packaged optics and test tooling.

FPC Process Equipment

Flexible Circuit Fabrication

Electroplating, dry-film lamination, etching, vacuum fast-press, nickel-gold plating and punch-press lines for flexible printed circuits used in wearables, medical devices and automotive displays.