SILICON CARBIDE (SiC) SCHOTTKY DIODES
Unleashing High-Efficiency Power Solutions
Silicon Carbide (SiC) Schottky Diodes, are critical for high-efficiency power electronics, offering low forward voltage drop, fast switching, and high-temperature operation. Supreme Pro’s SiC Diodes redefine power electronics with superior efficiency and reliability for electric vehicles, renewable energy, and industrial systems. Engineered through our Singapore-Taiwan partnership, leveraging Taiwan’s 46% global semiconductor foundry capacity, our SiC Diodes offer ultra-low forward voltage drop, fast switching, and high-temperature operation.
Designed for automotive, solar, and industrial applications, they deliver up to 99% power conversion efficiency and reduce system size by 40%. With 6-inch and emerging 8-inch wafer production, our SiC Diodes power your high-performance designs with unmatched efficiency and durability.
+ we provide fully customizable SiC Diodes to suit your unique needs, including specialized options like merged PiN-Schottky (MPS) diodes. Contact us today for a personalized quote and discover how our solutions can advance your projects.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
WHY CHOOSE SiC DIODES?
Superior Efficiency
Up to 99% power conversion efficiency reduces energy costs in EVs and renewable energy systems.
Compact Power Solutions
40% smaller modules enable lightweight, space-saving designs for automotive and industrial applications.
High-Temperature Operation
175°C capability ensures reliability in harsh environments like EV powertrains.
Ultra-Fast Switching
Near-zero reverse recovery supports rapid EV charging and compact power supplies.
Market Leadership
Aligned with the $11.13 billion SiC Diode market’s 15.6% CAGR, driving innovation in power electronics.
WHY CHOOSE US?
Our SiC Diodes lead in a competitive market, powered by Singapore’s market agility and Taiwan’s world-class semiconductor expertise. Here’s why global buyers trust us:
Uncompromising Quality
Partnering with Taiwanese foundries, we deliver AEC-Q101-certified SiC Diodes with V_F as low as 1.5V, meeting JEDEC standards for automotive and industrial applications.
Cost Optimization
8-inch wafer adoption and optimized designs reduce costs by up to 20%, addressing buyer concerns about SiC’s high cost vs. silicon.
Custom Solutions
Tailored voltage (650V–6.5 kV) and package options (TO-220, D2PAK) meet specific project needs, mirroring Infineon’s application-specific approach.
Sustainability Focus
High-efficiency SiC Diodes reduce energy losses by 50%, supporting green initiatives in EVs and renewables.
Advanced Manufacturing
Using 6-inch wafers with 8-inch transitions, we match Wolfspeed’s yield improvements (5–10% higher) for cost-efficient production.
Reliable Supply Chain
Our Singapore-Taiwan synergy mitigates SiC substrate supply risks, ensuring stability akin to STMicroelectronics’ partnerships with Sanan Optoelectronics.
Global Trust
Certified to ISO 9001, ISO 14001, RoHS, and REACH, our diodes are trusted by OEMs in 50+ countries, backed by Taiwan’s 46% foundry share.
Contact Us: Ready to enhance your systems with our SiC Diodes? Click below to request a quote or discuss custom specifications.
SPECIFICATIONS
Material: 4H-SiC (wide bandgap semiconductor, 3.26 eV)
Voltage Ratings: 650V, 1200V, 1700V, up to 6.5 kV (customizable for high-power applications)
Forward Voltage Drop (V_F): 1.5V at 1200V (low for high efficiency)
Switching Frequency: >100 MHz (ultra-fast for minimal switching losses)
Operating Temperature: -55°C to 175°C (robust for automotive and industrial use)
Reverse Recovery Time (t_rr): Near-zero (10–20 ns), reducing switching losses
Current Ratings: 5A–50A (scalable for EV chargers and industrial inverters)
Thermal Conductivity: 370 W/m·K (3x silicon for superior heat dissipation)
Breakdown Electric Field: 2.5–3 MV/cm (10x silicon for high-voltage operation)
Package Types: TO-220, TO-247, D2PAK, bare die (AEC-Q101-compliant)
Certifications: AEC-Q101, ISO 9001, RoHS, REACH
Packaging: Anti-static, vacuum-sealed in Class 100 cleanroom for reliability
Contact Us: Inquire about custom specifications or pricing. Click below to connect with our team.
STANDOUT FEATURES
High Thermal Conductivity
370 W/m·K ensures efficient heat dissipation, ideal for high-power EV inverters and 5G amplifiers.
Wide Bandgap
3.26 eV enables high-voltage operation (up to 6.5 kV) with minimal leakage.
Chemical Stability
SiC resists degradation from acids, alkalis, and molten salts up to 800°C, unlike silicon, which fails at lower thresholds.
Lower Forward Voltage Drop
1.5V reduces power losses by 50% in high-power applications, boosting efficiency in EV chargers.
Super-Fast Switching
>100 MHz with near-zero reverse recovery (10–20 ns), ideal for high-frequency inverters.
High Breakdown Field
2.5–3 MV/cm (10x silicon) enables robust high-voltage devices, ideal for 800V EV platforms.
ADDITIONAL BENEFITS
High Efficiency
Enables system efficiencies up to 99% in EV chargers and solar inverters by reducing conduction and switching losses.
Scalable Production
6-inch wafers with industry transition to 8-inch, enables higher yield, lower cost, and stable long-term supply.
Compact Designs
40% smaller power modules due to high power density, ideal for EVs and data centers.
Contact Us: Discover how our SiC Diodes can optimize your designs. Click below for a quote.
High-Temperature Operation
175°C operation extends lifespan in high-temperature environments like automotive powertrains.
Reliability
AEC-Q101 certification ensures durability in automotive and industrial applications.
INDUSTRIES & SYSTEMS USING SiC DIODES
On-board Chargers
Traction Inverters
Fast Charging Stations
Battery Chargers
Freewheel Diodes
Brake Chopper Diodes
String Inverters
Central Inverters
PV Combiner Box Rectifiers
Wind Converter Rectifiers
HV Rectifier Modules
HVDC Converter Stations
Substation Rectifiers
Power Factor Correction Modules
Industries
Semiconductor
Electronics Manufacturing Services (EMS)
Automotive / EVs
Renewable Energy
Power Management
Telecommunications
AI Data Centers
Robotics
Industrial Automation
Systems / Devices
Test & Measurement
Optoelectronics / Photonics
Consumer Electronics
Aerospace & Defense
Medical
Mining
Oil & Gas
Marine
Research & Development
PFC Modules
Server PSU Rectifiers
Telecom Rectifiers
Rectifier Modules
Avionics Rectifiers
Satellite Rectifiers
Space Power Rectifiers
Radar Rectifiers
Protection Diodes
Power Conditioning Diodes
Freewheel Diodes
Brake Chopper Diodes
Welding Rectifiers
Induction Heating Rectifiers
Downhole Rectifiers
Drilling Power Rectifiers
Discover how our SiC Diodes can optimize your designs. Click below for a quote.
Ship Rectifiers
Marine Charger Rectifiers
Traction Rectifiers
Brake Rectifiers
Charger Rectifiers
Power Adapter Rectifiers
Imaging Rectifiers
Therapy Power Rectifiers
Test Rectifiers
Prototype Rectifiers
Tool PSU Rectifiers
CVD Power Rectifiers
Electrolysis Rectifiers
Process Power Rectifiers
At Supreme Pro, we provide fully customizable SiC Diodes to suit your unique needs, including specialized options like merged PiN-Schottky (MPS) diodes. Contact us today for a personalized quote and discover how our solutions can advance your projects.
Our SiC Diodes
G6 650V
SiC Schottky Diodes G6 650V TO220-2L True 2 Pin
SiC Schottky Diodes G6 650V TO220-3L
SiC Schottky Diodes G6 650V TO220F-2L
SiC Schottky Diodes G6 650V TO247-2L True 2 Pin
SiC Schottky Diodes G6 650V TO247-3L
SiC Schottky Diodes G6 650V TO-3PF
SiC Schottky Diodes G6 650V DPAK
SiC Schottky Diodes G6 650V TO263-2L True 2 Pin
SiC Schottky Diodes G6 650V TSPAK
SiC Schottky Diodes G6 650V TOLT
SiC Schottky Diodes G6 650V DFN 8x8
G5 650V
SiC Schottky Diodes G5 650V TO220-2L True 2 Pin
SiC Schottky Diodes G5 650V TO220-3L
SiC Schottky Diodes G5 650V TO220F-2L
SiC Schottky Diodes G5 650V TO247-2L True 2 Pin
SiC Schottky Diodes G5 650V TO247-3L
SiC Schottky Diodes G5 650V TO-3PF
SiC Schottky Diodes G5 650V DPAK