GALLIUM NITRIDE (GaN) HEMTs
Powering the Future of High-Efficiency Electronics
Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are critical for high-frequency, high-power applications due to their wide band gap, high electron mobility, and high breakdown voltage. Our GaN HEMTs revolutionize power electronics with unmatched efficiency, high-frequency performance, and compactness for electric vehicles, 5G infrastructure, and renewable energy systems. Engineered through our Singapore-Taiwan partnership, leveraging Taiwan’s 46% global semiconductor foundry capacity, our GaN HEMTs offer ultra-low on-resistance, high switching frequencies, and high electron mobility.
Designed for automotive, telecommunications, and industrial applications, they achieve up to 99% power conversion efficiency and reduce system size by 50%. With 6-inch and emerging 8-inch wafer production, our GaN HEMTs power your next-generation systems with cutting-edge performance and reliability.
Our GaN HEMTs & GaN FETs
100V
100V E-Mode GaN HEMT LGA
100V GaN HEMT TO-263 (D2PAK)
100V GaN HEMT QFN 5x6
100V E-Mode GaN FET TO-247
100V GaN HEMT TOLL
100V GaN FET TOLT
100V GaN HEMT TO-3PF
100V GaN FET QFN 8x8
650V
650V E-Mode GaN HEMT TO-247
650V GaN HEMT TO-263-7L (TSPAK)
650V GaN HEMT TO-3PF
650V E-Mode GaN FET TOLL
650V GaN HEMT TOLT
650V GaN FET QFN 8x8
650V GaN HEMT TO-247-4L
+ We offer fully customizable GaN HEMTs to suit your unique needs, featuring adjustable voltage classes, current capacities, and packages such as PQFN or TO-263. Reach out today for a tailored quote and discover how our innovative solutions can advance your work in 5G, EV, and power electronics sectors.
40V
40V E-Mode GaN HEMT PQFN 5x6
40V GaN FET QFN 3x3
40V E-Mode GaN HEMT TO-263 (DPAK)
40V GaN HEMT TOLL
40V E-Mode GaN FET TOLT
40V GaN HEMT QFN 8x8
40V GaN FET TO-3PF
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
WHY CHOOSE GaN HEMTs?
Superior Efficiency
Up to 99% power conversion efficiency reduces energy costs in EVs and 5G infrastructure.
Compact Power Solutions
50% smaller modules enable lightweight, space-saving designs for automotive and consumer electronics.
High-Frequency Operation
>1 MHz capability supports rapid EV charging and 5G RF performance.
Thermal Stability
150°C operation ensures reliability in harsh environments like automotive powertrains.
Market Leadership
Aligned with the $20.11 billion GaN market’s 22.7% CAGR, driving innovation in power electronics (web:10).
WHY CHOOSE US?
Our GaN HEMTs lead in a competitive market, powered by Singapore’s market agility and Taiwan’s world-class semiconductor expertise. Here’s why global buyers trust us:
Uncompromising Quality
Partnering with Taiwanese foundries, we deliver AEC-Q101-certified GaN HEMTs with R_DS(on) as low as 15 mΩ, meeting JEDEC standards for automotive and telecom applications.
Cost Optimization
8-inch wafer adoption and optimized AlGaN/GaN designs reduce costs by up to 20%, addressing buyer concerns about GaN’s high cost vs. silicon.
Custom Solutions
Tailored voltage (100V–1200V) and package options (DFN, QFN) meet specific project needs, mirroring Infineon’s application-specific approach.
Sustainability Focus
High-efficiency GaN HEMTs reduce energy losses by 60%, supporting green initiatives in EVs and renewables.
Advanced Manufacturing
Using 6-inch wafers with 8-inch transitions, we match GaN Systems’ yield improvements (5–10% higher) for cost-efficient production.
Reliable Supply Chain
Our Singapore-Taiwan synergy mitigates GaN substrate supply risks, ensuring stability akin to Wolfspeed’s partnerships.
Global Trust
Certified to ISO 9001, ISO 14001, RoHS, and REACH, our HEMTs are trusted by OEMs in 50+ countries, backed by Taiwan’s 46% foundry share.
Contact Us: Ready to enhance your systems with our GaN HEMTs? Click below to request a quote or discuss custom specifications.
SPECIFICATIONS
Material: GaN-on-Si, GaN-on-Sapphire, AlGaN/GaN heterostructure (wide bandgap, 3.4 eV)
Voltage Ratings: 40V, 100V, 650V (customizable for high-power applications)
On-Resistance (R_DS(on)): As low as 15 mΩ at 650V (best-in-class efficiency)
Switching Frequency: >1 MHz (ultra-fast for high-frequency applications)
Operating Temperature: -40°C to 150°C (robust for automotive and industrial use)
Electron Mobility: Up to 2000 cm²/V·s (2DEG for high current density)
Breakdown Voltage: Up to 650V (commercial), research up to 10 kV (web:19)
Thermal Conductivity: 130–200 W/m·K (excellent heat dissipation)
Gate Threshold Voltage (V_GS(th)): 1.5–2.5V (E-mode, optimized for low power loss)
Current Ratings: 10A–90A (scalable for EV inverters and 5G amplifiers)
Package Types: DFN, QFN, TO-247, bare die (AEC-Q101-compliant)
Certifications: AEC-Q101, ISO 9001, RoHS, REACH
Packaging: Anti-static, vacuum-sealed in Class 100 cleanroom for reliability
Contact Us: Inquire about custom specifications or pricing. Click below to connect with our team.
STANDOUT FEATURES
Ultra-Low On-Resistance
15 mΩ at 650V minimizes conduction losses, boosting efficiency in EV inverters.
Wide Band Gap
3.4 eV supports high-voltage operation (up to 1200V) with minimal leakage.
Thermal Stability
Operates at 150°C, reducing cooling needs in automotive and RF applications.
High Switching Frequency
>1 MHz reduces switching losses, ideal for 5G base stations and solar inverters.
High Breakdown Field
3.3 MV/cm enables compact, robust high-voltage devices, supporting efficient 5G infrastructure and EV fast-charging systems.
High Electron Mobility
2000 cm²/V·s via 2DEG enables high current density and compact designs.
ADDITIONAL BENEFITS
High Efficiency
Up to 99% power conversion efficiency reduces energy losses in EV chargers and 5G amplifiers.
Reliability
AEC-Q101 certification ensures durability in automotive and industrial applications.
Compact Designs
50% smaller power modules due to high power density, ideal for EVs and data centers.
Contact Us: Discover how our GaN HEMTs can optimize your designs. Click below for a quote.
Lower Capacitance
Up to 80–90% lower output and gate capacitance, enabling superior high-frequency performance and reduced switching losses.
Sustainability
Higher efficiency and smaller form factor reduce energy consumption, lowering system-level CO₂ emissions
INDUSTRIES & SYSTEMS USING GaN HEMTs
5G Base Stations
Remote Radio Heads
Power Amplifiers
Small Cells
Microwave Backhaul Links
Satellite Transponders
Satellite Amplifiers
LEO Terminal Amplifiers
Radar Transmitters
AESA Modules
Industries
Telecommunication
Data Centers
Aerospace
Defense
Electric Vehicles
Industrial & Automation
Systems / Devices
Consumer Electronics
Medical
Industrial Automation
Research & Development
Semiconductor Manufacturing
Marine
Electronic Warfare Amplifiers
Jammers
Automotive Radar
LiDAR Transmitters
On-board Chargers
DC-DC Converters
Fast Charging Stations
Fast Chargers
Power Adapters
RF Front End Modules
Contact Us: Discover how our GaN HEMTs can optimize your designs. Click below for a quote.
MRI RF Amplifiers
RF Therapy Amplifiers
Microwave Heating Systems
Industrial Radar Sensors
RF Testbeds
mmWave Prototyping
RF Test Equipment
Wafer Test Amplifiers
Marine Radar Amplifiers
Ship Communication Amplifiers