SiC Schottky Diodes (G2 1200V)
Supreme Pro’s Silicon Carbide (SiC) Schottky Diodes deliver superior performance for demanding power conversion applications. Engineered for minimal switching losses and temperature-independent operation, these diodes offer an exceptional figure-of-merit and robust surge current capability. Ideal for high-voltage systems like data center power supplies and EV chargers, the G2 1200V series ensures ultra-low forward voltage and zero reverse recovery, enhancing energy efficiency and system reliability.
Our SiC Diodes (G2 1200V)
Why Choose SiC Diodes?
SiC diodes are semiconductor devices designed for the power electronics industry, composed of a robust silicon-carbide compound. Celebrated for their low forward voltage drop, zero reverse recovery charge, and wide band gap, these diodes provide a solid foundation for efficient power rectification and switching in high-voltage circuits. With their exceptional ruggedness and ability to operate at elevated temperatures, SiC diodes excel in challenging conditions, offering a dependable platform for innovative power management.
The unique characteristics of SiC diodes make them a preferred choice for applications requiring fast switching, high efficiency, and thermal resilience, distinguishing them in the power semiconductor field.
Advantages Over Traditional Silicon
Compared to conventional silicon-based diodes, SiC diodes enable the development of components with faster recovery times, lower switching losses, higher voltage handling, and improved thermal performance, leveraging their superior band gap and material properties.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
+ we provide fully customizable SiC diodes to suit your unique needs, including specialized options like merged PiN-Schottky (MPS) diodes. Contact us today for a personalized quote and discover how our solutions can advance your projects.
Our SiC Diodes
G6 650V
SiC Schottky Diodes G6 650V TO220-2L True 2 Pin
SiC Schottky Diodes G6 650V TO220-3L
SiC Schottky Diodes G6 650V TO220F-2L
SiC Schottky Diodes G6 650V TO247-2L True 2 Pin
SiC Schottky Diodes G6 650V TO247-3L
SiC Schottky Diodes G6 650V TO-3PF
SiC Schottky Diodes G6 650V DPAK
SiC Schottky Diodes G6 650V TO263-2L True 2 Pin
SiC Schottky Diodes G6 650V TSPAK
SiC Schottky Diodes G6 650V TOLT
SiC Schottky Diodes G6 650V DFN 8x8
G5 650V
SiC Schottky Diodes G5 650V TO220-2L True 2 Pin
SiC Schottky Diodes G5 650V TO220-3L
SiC Schottky Diodes G5 650V TO220F-2L
SiC Schottky Diodes G5 650V TO247-2L True 2 Pin
SiC Schottky Diodes G5 650V TO247-3L
SiC Schottky Diodes G5 650V TO-3PF
SiC Schottky Diodes G5 650V DPAK
Applications of SiC Diodes
SiC diodes are essential for a broad range of electronic applications, including power rectification, voltage clamping, and freewheeling functions, improving system efficiency and reliability. These diodes also support critical sectors like renewable energy, automotive systems, and industrial power supplies, driving technological progress.
Additionally, SiC diodes are key to high-voltage converters, RF power amplifiers, and emerging research in quantum sensing and high-frequency electronics, fostering innovation across multiple domains. They serve as an ideal complement to MOSFETs and IGBTs in power circuits, enhancing overall system performance.
Specifications
Material: 4H-SiC (wide bandgap semiconductor, 3.26 eV)
Voltage Ratings: 650V, 1200V, 1700V, up to 6.5 kV (customizable for high-power applications)
Forward Voltage Drop (V_F): 1.5V at 1200V (low for high efficiency)
Switching Frequency: >100 MHz (ultra-fast for minimal switching losses)
Operating Temperature: -55°C to 175°C (robust for automotive and industrial use)
Reverse Recovery Time (t_rr): Near-zero (10–20 ns), reducing switching losses
Current Ratings: 5A–50A (scalable for EV chargers and industrial inverters)
Thermal Conductivity: 370 W/m·K (3x silicon for superior heat dissipation)
Breakdown Electric Field: 2.5–3 MV/cm (10x silicon for high-voltage operation)
Package Types: TO-220, TO-247, D2PAK, bare die (AEC-Q101-compliant)
Certifications: AEC-Q101, ISO 9001, RoHS, REACH
Packaging: Anti-static, vacuum-sealed in Class 100 cleanroom for reliability
Selecting the Right SiC Diodes
Choosing the ideal SiC diode from Supreme Pro involves evaluating specific criteria that buyers prioritize based on their needs:
Voltage Rating: Select from 600V to 3300V to match the system's blocking voltage requirements for high-power applications.
Current Rating: Opt for 5A to 50A forward current to ensure handling of peak loads without overheating.
Forward Voltage Drop: Aim for low values (e.g., 1.5V–1.7V at 25°C) to minimize conduction losses in efficiency-critical circuits.
Reverse Recovery Charge: Target near-zero Qrr (e.g., <100 nC) to reduce switching losses in high-frequency operations.
Thermal Resistance: Choose diodes with low junction-to-case thermal resistance (e.g., <1°C/W) for effective heat dissipation in compact designs.
Package Type: Select TO-247, TO-220, or SMD packages based on mounting and space constraints.
Junction Temperature: Ensure capability up to 175°C–200°C for reliable operation in harsh environments.
At Supreme Pro, we provide fully customizable SiC diodes to suit your unique needs, including specialized options like merged PiN-Schottky (MPS) diodes. Contact us today for a personalized quote and discover how our solutions can advance your projects.
