8 inch Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Key Features

  • Wide bandgap for high-temperature stability

  • High thermal conductivity for heat dissipation

  • Breakdown field for high-voltage use

  • Low micropipe density for high yield

  • Available in 6–8" diameters for scalability

  • 4H/6H polytypes for power/RF devices

  • N-type/semi-insulating doping options

  • High purity with uniform resistivity

  • Strong mechanical strength

  • Epi-ready surface

  • Low CTE for thermal matching

  • Mohs hardness for durability

Specifications

  • Material: 4H-SiC (power electronics), 6H-SiC (RF applications)

  • Diameter: 200mm

  • Thickness: 350–500 µm

  • Micropipe Density (MPD): ≤1/cm² (Ultra-Prime Grade) or ≤5/cm² (Prime Grade)

  • Resistivity Uniformity: ≥90%

  • Surface Finish: Chemical Mechanical Polishing (CMP), mirror-like, Ra <0.5 nm

  • Doping: N-type (nitrogen-doped, resistivity 0.015–0.028 Ω·cm) or semi-insulating (vanadium-doped, >10^5 Ω·cm)

  • Thermal Conductivity: 370–490 W/m·K

  • Breakdown Electric Field: 2.5–3.5 MV/cm

  • Bandgap: 3.26 eV

  • Crystal Orientation: (100) or (111), (0001) with 4° off-axis (power devices)

  • Total Thickness Variation (TTV): <5 µm

  • Bow/Warp: <25 µm bow, <40 µm warp

  • Packaging: Class 100 cleanroom, vacuum-sealed for contamination-free transport

Benefits

  • Compact designs with reduced cooling needs

  • Higher energy efficiency and lower losses

  • Reliable in harsh, radiation-heavy environments

  • Lower costs via higher yields and longevity

  • Supports high-frequency use

  • Scalable for mass production

  • Minimizes thermal stress in multi-layers

  • Boosts power density

  • Low noise for better compatibility

  • Enhances sustainability in energy systems

  • Faster switching and higher voltage handling

  • Improved thermal management for compact systems

Applications

  • Substrates for SiC MOSFETs and diodes

  • RF/microwave amplifiers

  • High-temperature sensors

  • Optoelectronic LEDs/lasers

  • EV inverters and chargers

  • Solar/wind power inverters

  • Aerospace power units

  • Industrial motor drives

  • Quantum computing substrates

  • Photovoltaic power modules

  • High-power MMICs

  • Gas/chemical sensors

At Supreme Pro, we offer fully customizable SiC wafers and substrates to suit your unique needs, including specialized epitaxial options. Contact us today for a personalized quote and explore how our tailored solutions can elevate your projects.