Silicon Carbide (SiC)
Powering the Future of High-Performance Electronics
Silicon Carbide (SiC) is a next-generation wide bandgap semiconductor material redefining performance, efficiency, and reliability in high-power and high-frequency applications. With superior thermal, electrical, and mechanical properties, SiC delivers unprecedented power density, faster switching, and higher temperature operation — enabling engineers to design smaller, lighter, and more energy-efficient systems.
Standout Features
Wide Bandgap – Allows higher breakdown voltages and superior efficiency.
Exceptional Thermal Conductivity – Efficient heat dissipation for cooler operation.
High Breakdown Electric Field Strength – Supports compact, high-voltage designs.
High Saturation Electron Velocity – Enables ultra-fast switching speeds.
Operation at Extreme Temperatures – Stable performance up to 600°C junction temperatures.
Corrosion & Radiation Resistance – Ideal for harsh and space environments
SiC Crystal
SiC Crystal
Applications
Power Electronics – High-voltage switches, DC-DC converters, solar inverters, EV traction systems, onboard chargers.
Energy Infrastructure – Smart grid equipment, high-voltage transmission (HVDC), energy storage systems.
Industrial Power Systems – Motor drives, pumps, welding equipment, automation controls.
Transportation Electrification – Railway traction, marine propulsion, aerospace power systems.
Renewable Energy – Wind turbine converters, photovoltaic power systems.
Why Choose Silicon Carbide?
SiC is not just an alternative to silicon — it is the foundation for the next generation of high-efficiency, high-reliability, and sustainable power electronics. Its unmatched performance makes it the material of choice for innovators shaping a cleaner, faster, and more powerful world. Click below to explore our range of SiC products.
Superior Benefits
Higher Efficiency – Reduced power losses for greener energy systems.
Compact Designs – Higher power density for smaller, lighter systems.
Lower Cooling Needs – Cuts cost, weight, and system complexity.
Extended Lifetime – Enhanced robustness and long-term reliability.
Extreme Condition Performance – Stable operation under high heat, voltage, and radiation.
| Property | Silicon (Si) | Silicon Carbide (SiC) | SiC Advantage |
|---|---|---|---|
| Bandgap (eV) | 1.12 | 3.26 | Higher voltage capability, lower loss |
| Thermal Conductivity (W/m·K) | ~150 | ~490 | Superior heat dissipation |
| Breakdown Electric Field (MV/cm) | 0.3 | 3.0 | 10× higher voltage handling |
| Max Operating Temperature (°C) | ~150 | ~600 | Reliable in extreme heat |
| Switching Speed | Moderate | Very High | Reduced switching losses |
| System Size & Weight | Larger | Smaller | Higher power density |
Industries Served
Electric Vehicles & Charging Infrastructure
Renewable Energy & Energy Storage
Power Transmission & Smart Grid
Industrial Automation & Motor Control
Aerospace & Defense
Railway & Marine Power Systems
Oil, Gas & Harsh Environment Systems
Silicon Carbide (SiC)